Parallel EEPROM

Introduction

 
Parallel EEPROMs are made to meet battery operated application requirements. The device is done through a parallel interface, which results in a high system clock rate. Such devices have chip select and write protect pins. Parallel EEPROM and battery backed-up SRAMs are the only two of the four major types of parallel nonvolatile memories that have the capability to erase and program one byte at a time.

Features

• Operating voltage, 2.7V/5V operation, supports various types of system power
• Data security function, software data protection, reset pin, improved data reliability
• High-speed access, improved system efficiency
• Temperature expansive products, also supports outdoor equipment
• Fast write cycle time:
  – 5ms max.
• 100,000 program/erase cycles
• 100 year data retention

Click here to order Parallel EEPROM samples from Catalyst Semiconductor.