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Introduction
An extensive lineup of discrete devices with small packages is offered by NEC. These are lightweight designs, and low power consumption.
- The most advanced UMOS process technology is used in MOSFETs
- For high-speed USB 2.0, IEEE 1394a, digital video interface (DVI), and 100Base data, NEC offers surge absorber device (NSAD) diodes
- Different voltages and packages are offered in ESD protection diodes and they assure minimum endurance of endurance of 8 to 30 kV based on the IEC61000-4-2 electrostatic immunity test
MOSFET
A proactive approach is taken by NEC Electronics to power management, developing and commercializing semiconductors such as power MOSFETs for a broad spectrum of applications. Various power management devices that contribute to lower power consumption and miniaturization of automotive electronic devices, personal computers, mobile phones, and more are currently being offered.
Bipolar Transistor
Two types of bipolar transistors are being offered:
- Small Signal Transistors
- Power Transistors
- Low VCE(sat), High hFE
- Low Voltage, High-speed Switching, High Voltage, High-speed Switching
- Audio Frequency Amplification, High Frequency Amplification
- Darlington
J-FET
Various types of J-FETs are:
- Transistor Array
- Power Transistor Array (Multi-chip, 4 circuits)
- Small Signal Transistor Array(Multi-chip)
- Small Signal Transistor Array(Monolithic)
- J-FET+Bipolar Transistor
- Power Transistor Array (Multi-chip, 4 circuits)
- Small Signal Transistor Array(Monolithic)
- J-FET+Bipolar Transistor
Click here to order Discrete samples from NEC Electronics America.
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